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Metal–Semiconductor Transition of La2NiO4+δ

✍ Scribed by K. Ishikawa; W. Shibata; K. Watanabe; T. Isonaga; M. Hashimoto; Y. Suzuki

Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
272 KB
Volume
131
Category
Article
ISSN
0022-4596

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pretations disagree on its nature (6-8). The thermal depen-Materials with La 2 NiO 4؉␦ composition, ␦ ranging between 0 dence of the conductivity of La 2 NiO 4ϩͳ (0 Յ ͳ Յ 0.05) has and 0.25, have been prepared either by solid state reaction or been described by Arrhenius laws with activation energie

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We report herein results concerning the solid solutions Pr 2؊x M x NiO 4؉ , M ‫؍‬ La, Sr. These two cations are larger than praseodymium and lead to a structural stabilization. The oxygen excess decreases with x for La and Sr substituted Pr 2 NiO 4؉ . Both cases suggest that structural strain is a l