Metal–semiconductor transition in SmxMn1−xS solid solutions

✍ Scribed by Sergey Aplesnin; Oxana Romanova; Anton Har'kov; Dmitrii Balaev; Michail Gorev; Alexander Vorotinov; Vladimir Sokolov; Andrey Pichugin

• Book ID: 104542016
• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 306 KB
• Volume: 249
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/pssb.201147327

✦ Synopsis

Abstract

The electrical resistivity of the Sm~x~Mn~1−x~S (0.15 ≤ x ≤ 0.25) solid solutions in the temperature range of 80–300 K was measured. Minimum and maximum in the temperature dependence of the resistivity were found, respectively, at T = 220 K for x = 0.15 and at T = 100 K for x = 0.2 compounds. This behavior is explained from the result of the mobility‐edge movement, the disorder being due to elastic deformation and spin density fluctuations with short‐range order. Metal–semiconductor phase transition versus concentration at x~c~ = 0.25 is observed. Resistivity is described by scattering electrons with acoustic phonon mode and with localized manganese spin. From the thermal expansion coefficient the compression of the lattice below the Néel temperature for Sm~0.2~Mn~0.8~S is found.