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Metalorganic vapour phase epitaxy growth of Zn1-xMgxTe layers

✍ Scribed by B. Qu'Hen; R. Helbing; W.S. Kuhn; J.E. Bourée; A. Lusson; O. Gorochov


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
452 KB
Volume
145
Category
Article
ISSN
0022-0248

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Conventional metalorganic vapour phase epitaxy (MOVPE) has been very successful in providing high quality GaN films, however, the growth takes place at high temperature and thus requires large flow rates of high purity ammonia. In order to avoid such high and costly use of ammonia, we have developed