✦ LIBER ✦
Metalorganic vapor phase epitaxy growth of InGaP using tertiarybutylphosphine and its application to selective regrowth of current blocking layers of laser diodes
✍ Scribed by M. Horita; M. Usami; Y. Matsushima
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 469 KB
- Volume
- 145
- Category
- Article
- ISSN
- 0022-0248
No coin nor oath required. For personal study only.