Metallization of Monocrystalline Silicon under Shock Compression

✍ Scribed by S. D. Gilev; A. M. Trubachev

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 116 KB
• Volume: 211
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/(sici)1521-3951(199901)211:1<379::aid-pssb379>3.0.co;2-4

✦ Synopsis

An experimental study on the metallization of monocrystalline silicon under shock compression has been performed. As the compression rises, silicon electroconductivity s increases monotonically over more than five orders of magnitude and reaches a value of s % 4X5 Â 10 4 W À1 cm À1 under a normal shock stress of P x % 23 GPa. The data obtained prove the mistake of early shock experiments by Coleburn et al. The trend of conductivity versus stress shows qualitative agreement with the static compression measurements by Bundy and Kasper. Moreover, the metal silicon conductivity under dynamic and static compression differs quantitatively. The temperature effect is proved to be small and the conductivity deviation is mainly caused by the shock generation of crystal structure defects. The estimation of vacancy concentration of metallic silicon gives a value of 0.05 per lattice atom. The value exceeds that for classic metals shocked by more than one order of magnitude, it exceeds also the equilibrium defect concentration by five orders of magnitude. Thus the metallic state of silicon in a shock wave is a highly defective and greatly nonequilibrium one.