Metal–insulator–semiconductor Schottky barrier structures fabricated using interfacial BN layers grown on GaN and SiC for optoelectronic device applications

✍ Scribed by Starikov, D.; Badi, N.; Berishev, I.; Medelci, N.; Kameli, O.; Sayhi, M.; Zomorrodian, V.; Bensaoula, A.

• Book ID: 121807527
• Publisher: AVS (American Vacuum Society)
• Year: 1999
• Tongue: English
• Weight: 268 KB
• Volume: 17
• Category: Article
• ISSN: 0734-2101
• DOI: 10.1116/1.581802