✦ LIBER ✦
Metal-oxide-semiconductor field-effect-transistor substrate current during FowlerâNordheim tunneling stress and silicon dioxide reliability
✍ Scribed by Schuegraf, Klaus F.; Hu, Chenming
- Book ID
- 121510689
- Publisher
- American Institute of Physics
- Year
- 1994
- Tongue
- English
- Weight
- 887 KB
- Volume
- 76
- Category
- Article
- ISSN
- 0021-8979
- DOI
- 10.1063/1.357438
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