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Metal-organic vapour-phase epitaxy of gallium nitride nanostructures for optoelectronic applications

✍ Scribed by S. Fündling; U. Jahn; A. Trampert; H. Riechert; H.-H. Wehmann; A. Waag

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
337 KB
Volume
40
Category
Article
ISSN
0026-2692

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A detailed investigation on p-n junction diodes of GaN using deep level transient Fourier spectroscopy (DLTFS) has been carried out. The typical deep level spectra on the various diodes on the same wafer demonstrate three electron levels labelled as E1, E2 and E3 and a hole trap H1 together with a b