Metal-insulator transition in 3d transition-metal oxides with ABO3 and A2BO4 type structures
β Scribed by H. Eisaki; T. Ido; K. Magoshi; M. Mochizuki; H. Yamatsu; T. Ito; S. Uchida
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 187 KB
- Volume
- 185-189
- Category
- Article
- ISSN
- 0921-4534
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π SIMILAR VOLUMES
A new type of lanthanide transition metal pnictide oxide, Ln 3 Cu 4 P 4 O 2 (for Ln β«Ψβ¬ La, Ce, and Nd), is reported. The crystal structure is made from Ln 2 O 2 layers of the Pb 2 O 2 type stacked with layers of Cu 2 P 2 tetrahedra and indicates the existence of a homologous series of compounds wit
It is demonstrated that the upper Hubbard band (UHB) can play an important role in the hopping conductivity; 2D geometry and vicinity of the metal-insulator transition emphasize this role. A simple model for the recently observed metal-insulator transition is suggested. The model starts from the ins