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Memory element based on ferroelectric field-effect transistor with use of ZnO:Li/LaB6heterostructures

✍ Scribed by N. R. Aghamalyan, T. A. Aslanyan…

Book ID: 120894846
Publisher: Allerton Press, Inc.
Year: 2013
Tongue: English
Weight: 287 KB
Volume: 48
Category: Article
ISSN: 1068-3372
DOI: 10.3103/S1068337213030067

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