Memory effect in ferroelectric-semiconductor with incommensurate phase TlGaSe2

✍ Scribed by V.P Aliyev; S.S Babayev; T.G Mammadov; Mir-Hasan Yu Seyidov; R.A Suleymanov

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 101 KB
• Volume: 128
• Category: Article
• ISSN: 0038-1098
• DOI: 10.1016/s0038-1098(03)00619-7

✦ Synopsis

The paper is devoted to the investigations of the non-equilibrium properties of the incommensurate (INC) phase of the improper ferroelectric-semiconductor TlGaSe 2 . The influence of the prehistory of the heat treating of the crystal, i.e. annealing at a fixed, stabilized temperature in the region of INC-phase on the dielectric constant ð1Þ in the vicinity of the phase transition (PT)-INC phase (the commensurate (C) ferroelectric phase) was studied. The peculiar case of the memory effect leading to the temperature range change of the INC-phase existence is observed for the first time in TlGaSe 2 .