✦ LIBER ✦
Memory-cell layout as a factor in the single-event-upset susceptibility of submicron dice CMOS SRAM
✍ Scribed by V. Ya. Stenin; I. G. Cherkasov
- Book ID
- 110215479
- Publisher
- Springer
- Year
- 2011
- Tongue
- English
- Weight
- 273 KB
- Volume
- 40
- Category
- Article
- ISSN
- 1063-7397
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