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Mechanism of Two-Level Hopping Current Fluctuations in Mesoscopic a-Si Based Structures

✍ Scribed by N.P. Stepina; A.I. Yakimov; A.V. Dvurechenskii

Publisher: John Wiley and Sons
Year: 2000
Tongue: English
Weight: 141 KB
Volume: 218
Category: Article
ISSN: 0370-1972
DOI: 10.1002/(sici)1521-3951(200003)218:1<155::aid-pssb155>3.0.co;2-w

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✦ Synopsis

Two-level fluctuations (random telegraph noise) of transverse hopping current have been investigated in mesoscopic nanostructures fabricated on a submicrometer area of a thin amorphous silicon layer. An electric field and light-induced change of the system lifetimes in the high and low conductive states is observed. The results are explained by formation and annealing of metastable defects in the atomic two-level hydrogen-related systems.