Mechanism of Slow-Mode Degradation in II–VI Wide Bandgap Compound Based Blue-Green Laser Diodes
✍ Scribed by M. Adachi; H. Yukitake; M. Watanabe; K. Koizumi; H.C. Lee; T. Abe; H. Kasada; K. Ando
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 104 KB
- Volume
- 229
- Category
- Article
- ISSN
- 0370-1972
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✦ Synopsis
Dislocation-free blue-green laser diodes of (ZnCd)Se/(ZnMg)(SSe) show a ''slow-mode" degradation during device operation. This degradation is caused not by generation and propagation of macroscopic defects, but by microscopic-point defect reaction (marked enhancement in its concentration and resulting migration process) during high-density carrier-injection. It is also evidenced experimentally that the direct driving force on the marked defect reaction is derived from minority carrier injection induced e-h non-radiative recombination process at localized point defect centers in the p-type cladding layer of the LD devices.