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Mechanism of pressure build-up in hydrogen bubbles during implantation

✍ Scribed by Kohji Kamada; Akio Sagara

Book ID
116062830
Publisher
Elsevier Science
Year
1988
Weight
352 KB
Volume
22
Category
Article
ISSN
0036-9748

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## Abstract The medium range implantation of rare earth ions at room temperature in GaN layers leads to the formation of point defect clusters, basal and prismatic stacking faults from the lowest fluence. When a threshold fluence of about 3 Γ— 10^15^ at/cm^2^ is reached, a highly disordered β€˜nanocry