Mechanism of Hf-silicide formation at interface between poly-Si electrode and HfO[sub 2]∕Si gate stacks studied by photoemission and x-ray absorption spectroscopy

✍ Scribed by Takahashi, H.; Okabayashi, J.; Toyoda, S.; Kumigashira, H.; Oshima, M.; Ikeda, K.; Liu, G. L.; Liu, Z.; Usuda, K.

• Book ID: 121658291
• Publisher: American Institute of Physics
• Year: 2006
• Tongue: English
• Weight: 289 KB
• Volume: 99
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.2206610