Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride

✍ Scribed by A. E. Belyaev; N. S. Boltovets; V. N. Ivanov; V. P. Klad’ko; R. V. Konakova; Ya. Ya. Kudrik; A. V. Kuchuk; V. V. Milenin; Yu. N. Sveshnikov; V. N. Sheremet

• Book ID: 111444053
• Publisher: Springer
• Year: 2008
• Tongue: English
• Weight: 262 KB
• Volume: 42
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/s1063782608060092