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Mechanism of Diffusion of Copper in Germanium

✍ Scribed by Frank, F. C.; Turnbull, D.

Book ID
121493195
Publisher
The American Physical Society
Year
1956
Tongue
English
Weight
164 KB
Volume
104
Category
Article
ISSN
0031-899X

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This paper concerns diffusion related properties of Cu in Ge and Si. In Ge, Cu prefers to occupy a substitutional lattice site whereas Cu in Si is mainly dissolved on an interstitial position. This difference in the lattice site occupancy is also reflected in the diffusion behaviour. Whereas Cu diff