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Mechanism of defect creation and light induced changes in compensated α-Si: H(B, Li) and α-Si: H(B, P) films

✍ Scribed by J.K. Rath


Book ID
103389634
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
427 KB
Volume
94
Category
Article
ISSN
0038-1098

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✍ Gallas, B. ;Rivory, J. ;Arwin, H. ;Vidal, F. ;Etgens, V. H. 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 292 KB

## Abstract MnAs layers with 45 nm thickness were grown epitaxially on GaAs(001) substrates. Ellipsometry measurements were made in the spectral range 0.045 eV to 6 eV as a function of temperature (between –10 °C and 50 °C) at 70° of incidence. In this way the transition from the hexagonal α‐phase