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Mechanism of anomalous recovery in advanced SiGe bipolar transistors after low dose rate irradiation for very high total doses

✍ Scribed by Pershenkov, V.S.; Ullán, M.; Wilder, M.; Spieler, H.; Spencer, E.; Rescia, S.; Newcomer, F.M.; Martinez-McKinney, F.; Kononenko, W.; Grillo, A.A.; Díez, S.


Book ID
122137288
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
867 KB
Volume
54
Category
Article
ISSN
0026-2714

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