✦ LIBER ✦
Mechanical stress simulation during gate formation of MOS devices considering crystallization-induced stress of phosphorus-doped silicon thin films
✍ Scribed by Hideo Miura; Naoto Saito; Noriaki Okamoto
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 341 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0026-2692
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