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Measurements of residual stress in semi-insulating GaAs by Cr-related luminescence lines

✍ Scribed by Y. Fujiwara; T. Nishino; Y. Hamakawa


Publisher
Springer
Year
1986
Tongue
English
Weight
701 KB
Volume
41
Category
Article
ISSN
1432-0630

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The temperature variation of the piezoelectric photoacoustic (PPA) signal intensity of semi-insulating (SI) GaAs from 20 to 150 K was measured. Four peaks at 50, 70, 110 and 125 K were observed in the PPA signal. From the theoretical analysis based on the rate equations of electrons in the conductio