Measurement of thresholds of damage to a charge-coupled device caused by a Q-switched laser

✍ Scribed by Jian Lu; Xaio-Wu Ni; Zhen-Hua Lin; An-Zhi He

• Publisher: John Wiley and Sons
• Year: 1996
• Tongue: English
• Weight: 352 KB
• Volume: 11
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/(sici)1098-2760(199603)11:4<194::aid-mop8>3.0.co;2-f

✦ Synopsis

The interaction process of laser and MOS-type charge-coupled devices (CCD) has been analyzed in brief: Several kinds of damage thresholds, including optical breakdown threshold, direct damage threshold, and laser energy threshold (which lea& to compkte failure of the device) produced by a Q-m'tched N&YAG laser have been put forward and obtained a p e h n t a l & . 0 19% John Wky & Sons, Inc.