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Measurement of the concentration of 2D electrons in δ-doped InGaAs/GaAs pseudomorphic transistor structures using the photoluminescence spectroscopy

✍ Scribed by Yaremenko, N. G.; Galiev, G. B.; Vasil’evskii, I. S.; Klimov, E. A.; Karachevtseva, M. V.; Strakhov, V. A.


Book ID
120401414
Publisher
SP MAIK Nauka/Interperiodica
Year
2013
Tongue
English
Weight
237 KB
Volume
58
Category
Article
ISSN
1064-2269

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