Microwave Faraday Effect in Anisotropic
β
G. P. Srivastava; P. C. Mathur; A. Kumar
π
Article
π
1971
π
John Wiley and Sons
π
English
β 308 KB
## Abstract The theory of free carrier Faraday effect in anisotropic semiconductors, previously developed by Donovan and Webster [1,2], is extended to the case of nβtype silicon. The highβfrequency magnetoconductivity tensors are derived taking into account the detailed structure of conduction band