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Measurement and simulation of memory effects in predistortion linearizers

โœ Scribed by Bosch, W.; Gatti, G.

Book ID
114552445
Publisher
IEEE
Year
1989
Tongue
English
Weight
544 KB
Volume
37
Category
Article
ISSN
0018-9480

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๐Ÿ“œ SIMILAR VOLUMES

Drain-voltage dependency of memory effec
Drain-voltage dependency of memory effects in W-CDMA base station digital predistortion linearizers with compound semiconductor power amplifiers
โœ Takeshi Takano; Yasuyuki Oishi; Toru Maniwa; Hiroyuki Hayashi; Toshihide Kikkawa ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 470 KB

With regard to wideband predistortion type power amplifiers, such as shared amplifiers used in W-CDMA base stations, the memory effects associated with RF power amplifiers degrade power efficiency. Aiming to solve this problem, we find that a high-voltage compound semiconductor device has sufficient