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Mean field Ising model with fluctuating interaction parameter. Organization in the presence of noise

✍ Scribed by E. Gudowska-Nowak

Publisher: Elsevier Science
Year: 1985
Tongue: English
Weight: 201 KB
Volume: 110
Category: Article
ISSN: 0375-9601
DOI: 10.1016/0375-9601(85)90330-5

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## Abstract In this study, we propose a model to simulate electrical conduction of single carrier organic diodes in the presence of a barrier for carrier injection and considering a field‐dependent carrier mobility. An analytical expression for the internal electric field function, that simplifies