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MBE growth optimization of InyGa1-yAs/GaAs multiple quantum well structures

✍ Scribed by E.C. Larkins; W. Rothemund; M. Maier; Z.M. Wang; J.D. Ralston; W. Jantz


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
423 KB
Volume
127
Category
Article
ISSN
0022-0248

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## Abstract We present the results of a comprehensive study carried out on morphological, structural and optical properties of InAs/GaAs quantum dot structures grown by Molecular Beam Epitaxy. InAs quantum dots were deposited at low growth rate and high growth temperature and were capped with InGaA