MBE growth of novel GaAsn-AlGaAs field-effect transistor structures with embedded InAs quantum traps and their transport characteristics

✍ Scribed by G. Yusa; H. Sakaki

• Book ID: 108342366
• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 410 KB
• Volume: 175-176
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/s0022-0248(96)00927-x