MBE growth and electroluminescence of ferromagnetic/non-magnetic semiconductor pn junctions based on (Ga,Mn)As

✍ Scribed by Y. Ohno; I. Arata; F. Matsukura; K. Ohtani; S. Wang; H. Ohno

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 226 KB
• Volume: 159-160
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/s0169-4332(00)00107-0

✦ Synopsis

Molecular beam epitaxial MBE growth of novel hybrid ferromagneticrnon-magnetic semiconductor pn junction light Ž . Ž . Ž . emitting diodes LEDs is presented. The ferromagnetic p-type Ga,Mn As layers were grown on i-In,Ga Asrn-GaAs Ž . Ž . structures to form LED structures. The current-voltage I-V characteristics and the electroluminescence EL spectra were measured at temperatures from 5 K to room temperature. In comparison to the properties of control samples consisting of all Ž . non-magnetic p-GaAsr In,Ga Asrn-GaAs LEDs, the EL intensity of ferromagneticrnon-magnetic pn junction LEDs exhibited unique temperature dependence.