Mathematical modeling for the composition prediction of compound films grown by ion-assisted deposition technique and its application to TiNx film
✍ Scribed by Jae-Keun Kim; J.S. Colligon; Sang-Hun Jeong
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 305 KB
- Volume
- 225
- Category
- Article
- ISSN
- 0168-583X
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✦ Synopsis
A simple general model has been formulated to explain the composition of compound films during growth simultaneous with ion bombardment. The variables in this model are (a) the sticking probability of the background residual reactive gas in the film, (b) an ion-enhanced sticking probability of these reactive gases arising from ion-enhanced adsorption and mixing and (c) ion implantation of the energetic ions impinging on the growing film. Preferential sputtering of various components in the film is also taken into account. The model is shown to be successful in explaining the experimental variations in the composition of TiN x films produced by ion-assisted growth.