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Mathematical model of gate-turn-off thyristor for use in circuit simulations

✍ Scribed by Tseng, K.J.; Palmer, P.R.

Book ID
114451181
Publisher
The Institution of Electrical Engineers
Year
1994
Tongue
English
Weight
699 KB
Volume
141
Category
Article
ISSN
1350-2352

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## Abstract Recently we developed a model for symmetric double‐gate MOSFETs (SDDGM) that, for the first time, considers the doping concentration in the Si film in the complete range from 1Γ—10^14^ to 3Γ—10^18^ cm^βˆ’3^. The model covers a wide range of technological parameters and includes short channe