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Material requirements and design considerations for Si/SiGe heterojunction CMOS

✍ Scribed by S. Badcock; A. O’Neill


Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
135 KB
Volume
28
Category
Article
ISSN
0749-6036

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✦ Synopsis


Five vertical architecture options for SiGe/Si heterojunction CMOS devices are compared using technology computer-aided design. The benefit of using SiGe over conventional MOSFETs is set to increase for future technology generations. We investigate the impact of material degradation, to determine the minimum requirements needed for HMOS to offer real advantages over conventional CMOS.