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Material properties of bulk InGaAs and InAlAs/InGaAs heterostructures grown on (111)B and (111)B misoriented by 1Â° towards â©211âª InP substrates

✍ Scribed by Yeo, W.; Dimitrov, R.; Schaff, W. J.; Eastman, L. F.

Book ID: 120348606
Publisher: American Institute of Physics
Year: 2000
Tongue: English
Weight: 511 KB
Volume: 77
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1332836

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Material properties of bulk InGaAs and InAlAs/InGaAs heterostructures grown on (111)B and (111)B misoriented by 1Â° towards â©211âª InP substrates

Material properties of bulk InGaAs and InAlAs/InGaAs heterostructures grown on (111)B and (111)B misoriented by 1Â° towards â©211âª InP substrates