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Material characterization need for SiC-based devices

✍ Scribed by E. Janzén; A. Henry; J.P. Bergman; A. Ellison; B. Magnusson


Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
406 KB
Volume
4
Category
Article
ISSN
1369-8001

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We report on the fabrication and performances of extremely e cient Si-based light sources. The devices consist of MOS structures with erbium (Er) implanted in the thin gate oxide. The devices exhibit strong 1:54 m electroluminescence (EL) at 300 K with a 10% external quantum e ciency, comparable to