Material and device properties of 3′ diameter GaAs-on-Si with buried P-type layers

✍ Scribed by S.J. Pearton; K.M. Lee; N.M. Haegel; C.-J. Huang; S. Nakahara; F. Ren; V. Scarpelli; K.T. Short; S.M. Vernon

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 538 KB
• Volume: 3
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(89)90024-x