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Maskless device fabrication technology using an integrated microwave CAD/CAM system (invited article)

✍ Scribed by Yamada, Takashi ;Nogawa, Kaoru ;Nishikawa, Madoka ;Harada, Yasoo


Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
953 KB
Volume
3
Category
Article
ISSN
1050-1827

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✦ Synopsis


Abstract

A maskless process for MMICs using highly sensitive posi‐type EB resists was developed using our integrated microwave CAD/CAM system. The process can fabricate fine patterns with 0.1‐μm levels and align layer‐to‐layer and field‐to‐field within an accuracy below 0.05 μm (σ) using two types of alignment marks. Topography simulation of EB lithography using the Monte Carlo method was also added to the system to obtain the profiles of posi‐type single and double‐layer resist structures used for the process. The maskless process was successfully applied to an L‐band low‐noise amplifier with a 0.5‐μm gate length MESFET and reduced its TAT significantly. © 1993 John Wiley & Sons, Inc.


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