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Majority carrier surface mobilities in thermally oxidized silicon

✍ Scribed by Krishna Reddi, V.G.


Book ID
118697171
Publisher
IEEE
Year
1968
Tongue
English
Weight
954 KB
Volume
15
Category
Article
ISSN
0018-9383

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## Abstract Transparent and conductive ZnO:Ga thin films are prepared by laser molecular‐beam epitaxy. Their electron properties were investigated by the temperature‐dependent Hall‐effect technique. The 300‐K carrier concentration and mobility were about __n~s~__ ∼ 10^16^ cm^–3^ and 440 cm^2^/V s,