Majority carrier mobility in ultra heavily doped n-type Si in the presence of defects and dislocations: M. B. Zivanov and M. Jevtic. Solid-State Electronics, 36(6), 891 (1993)

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 95 KB
• Volume: 34
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(94)90272-0