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Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb

✍ Scribed by T. I. Voronina; T. S. Lagunova; M. P. Mikhaĭlova; K. D. Moiseev; A. F. Lipaev; Yu. P. Yakovlev


Book ID
111443518
Publisher
Springer
Year
2006
Tongue
English
Weight
380 KB
Volume
40
Category
Article
ISSN
1063-7826

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Raman Scattering Study of Type II GaInAs
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Ga 1-x In x As y Sb 1-y quaternary solid solutions lattice-matched to the InAs (001) substrate with composition in the range 0.06 ≤ x ≤ 0.22 were grown by liquid phase epitaxy. Two peaks are observed in their Raman spectra over this composition range. The assignment of the observed modes to GaAs-lik