Magnetotransport of epitaxial SiGe layers on Si
β Scribed by W. Koschinski; K. Dettmer; F.R. Kessler
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 367 KB
- Volume
- 157
- Category
- Article
- ISSN
- 0022-0248
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
The degradation of smooth SiGe epitaxial layer was investigated by transmission electron microscopy (TEM), X-ray reflectivity (XRR) and atomic force microscopy (AFM). It was shown from AFM results that the crosshatch was formed with increasing annealing temperature, which indicated the degradation o
## Abstract Epitaxial siliconβgermanium (SiGe) thin films are being developed for a number of interesting applications. Potential uses include applications as fabrication layers for heterojunction bipolar transistor devices and a number of other novel electronic devices. For device applications, Si