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Magnetoresistance of a lateral contact to a two-dimensional electron gas

✍ Scribed by D. Uhlisch; M.Yu. Kupriyanov; A.A. Golubov; J. Appenzeller; Th. Klocke; K. Neurohr; A.V. Ustinov; A.I. Braginski

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
428 KB
Volume
225
Category
Article
ISSN
0921-4526

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✦ Synopsis

Lateral Nb contacts to a high-mobility two-dimensional electron gas (2DEG) in InGaAs heterostructures are studied. Below Tc of Nb a pronounced non-linearity due to the superconducting energy gap is observed in the differential resistance. The Nb/2DEG interface reveals an enhanced zero-bias resistance. In normal state, a drastic decrease of the resistance with increasing magnetic field perpendicular to the plane of the structure is observed. It is explained in terms of a confinement of electron trajectories near the interface with increasing magnetic field yielding an enhanced number of transmitted carriers. The suggested model shows good agreement with experiment. We conclude that the magnetic field strongly influences the effective conductance of weakly transparent contacts.

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