Magnetoresistance in ZnO induced by spin-splitting and weak localization
β Scribed by D.F. Wang; J.M. Kim; M.S. Seo; V.T.T. Thuy; Y.J. Yoo; Y.P. Lee; J.Y. Rhee
- Book ID
- 113784643
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 966 KB
- Volume
- 134
- Category
- Article
- ISSN
- 0254-0584
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π SIMILAR VOLUMES
The values of the zero-ΓΏeld spin-splitting energy 0 in InAlAs=InGaAs=InAlAs heterostructures are investigated using anti-weak-localization analysis. The obtained values for 0 are compared with values that were theoretically predicted assuming Rashba spin-orbit coupling (denoted by R ). The good agre
We present measurements of the electrical conductivity of barely metallic n-type GaAs that are driven to the metal-insulator transition (MIT) by magnetic field. The experiments were carried out at low temperature in the range (4.2-0.066 K) and in magnetic field up to 4 T. We have determined the magn