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Magnetoresistance and Hall effect of a 2DEG in GaAs/AlGaAs: electron interaction and ‘memory’ effects in the presence of a mixed disorder

✍ Scribed by E. A. Galaktionov; A. K. Savchenko; D. A. Ritchie


Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
356 KB
Volume
3
Category
Article
ISSN
1862-6351

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✦ Synopsis


Abstract

We have studied the corrections to the Drude conductivity and Hall constant of a high‐mobility twodimensional electron gas in a GaAs/AlGaAs heterostructure due to the electron‐electron interaction in the presence of a mixed disorder. A parabolic, negative, temperature‐dependent magnetoresistance (MR) and temperature‐dependent Hall constant are observed. We show that these effects can be explained in terms of the electron interaction theory and obtain the values of the Fermi‐liquid interaction parameter F^σ^~o~ . In addition, a temperature independent, positive MR has been detected. This classical MR is also shown to be a consequence of the mixed disorder. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)


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