Magnetization switching and tunneling magnetoresistance effects of MTJs with synthetic antiferromagnet free layers consisting of amorphous CoFeSiB

✍ Scribed by Rhee, J.R.; Hwang, J.Y.; Kim, S.S.; Kim, M.Y.; Chun, B.S.; Yoo, I.S.; Oh, B.S.; Kim, Y.K.; Kim, T.W.; Park, W.J.

• Book ID: 114650719
• Publisher: IEEE
• Year: 2005
• Tongue: English
• Weight: 113 KB
• Volume: 41
• Category: Article
• ISSN: 0018-9464
• DOI: 10.1109/tmag.2005.855296