Magnetic-field-induced two- to three-dimensional transition in weak localization and weak anti-localization regimes for In2O3−x thin films

✍ Scribed by H. Kobori; N. Hatta; M. Kawaguchi; T. Ohyama

• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 372 KB
• Volume: 12
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(01)00419-2

✦ Synopsis

We have extensively studied the magnetic-ÿeld-induced two-to three-dimensional transition in degenerated electronic systems in the weak localization and weak anti-localization regimes for polycrystalline In2O3-x thin ÿlms grown by the sputtering method. The magneto-conductance has been measured as functions of the temperature, the magnetic ÿeld, the azimuth of the magnetic ÿeld for the ÿlm surface and the ÿlm thickness (100, 150, 450 and 600 A).