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Magnetic exchange mechanism for electronic gap opening in graphene

✍ Scribed by Rappoport, T. G.; Godoy, M.; Uchoa, B.; dos Santos, R. R.; Castro Neto, A. H.

Book ID
120612645
Publisher
EDP Sciences
Year
2011
Tongue
English
Weight
877 KB
Volume
96
Category
Article
ISSN
0295-5075

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## Abstract First‐principles simulations have been performed for [001]‐ordered Mn/Ge and Mn/GaAs β€œdigital alloys”, focusing on the effects of (i) a larger band‐gap and (ii) a different semiconducting host on the electronic structure of the magnetic semiconductors of interest. Our results for the ex