Electrical and magnetic properties of Mn
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T.T. Lan Anh; S.S. Yu; Y.E. Ihm; D.J. Kim; H.J. Kim; S.K. Hong; C.S. Kim
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Article
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2009
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Elsevier Science
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English
β 245 KB
We have studied electrical and magnetic properties of x at% Mn-doped Si thin films with high Mn concentrations (x at% ΒΌ 7.5, 9.1, and 11.3), which were prepared by molecular beam epitaxy. Our data reveals that the films are p-type semiconductors at room temperature, and their hole density is about 1