Luminescence spectroscopy of europium doped gallium nitride powder prepared by a Na flux method
✍ Scribed by Brown, Ei ;Hömmerich, Uwe ;Yamada, Takahiro ;Yamane, Hisanori ;Zavada, John
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 326 KB
- Volume
- 208
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
The red emission properties of Eu doped gallium nitride (GaN) powder prepared by a Na flux method were characterized by time‐resolved photoluminescence (PL) and site‐selective PL excitation studies. Under above‐gap excitation (325 nm), Eu^3+^ doped GaN powders exhibited bright red luminescence at ∼622 nm (^5^D~0~ → ^7^F~2~ transition). The room‐temperature emission lifetime was determined to be ∼242 µs and increased only slightly at 10 K with a value of ∼252 µs. At the same time, the integrated Eu^3+^ PL intensity was quenched by a factor of ∼20 for the temperature range from 10 to 300 K. Low temperature PL excitation studies in the region of the ^7^F~0~ → ^5^D~0~ transition of Eu^3+^ ions indicated the existence of multiple Eu^3+^ centers with distinct excitation and emission properties in GaN:Eu powder.