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Luminescence properties of InAs quantum dots formed by a modified self-assembled method

✍ Scribed by Hee Yeon Kim; Mee-Yi Ryu; Jin Soo Kim

Book ID
113721105
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
601 KB
Volume
132
Category
Article
ISSN
0022-2313

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We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum